Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
نویسندگان
چکیده
Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y2O3 films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y2O3p110q r001s “
منابع مشابه
Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
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